DocumentCode
1915355
Title
High-Temperature Gate Capacitances of Thin-Film SOI MOSFETs
Author
Gentinne, B. ; Flandre, D. ; Colinge, J.-P. ; van de Wiele, F.
Author_Institution
Microelectron. Lab. (DICE), Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
687
Lastpage
690
Abstract
This paper presents original measurements and two-dimensional simulations of high-temperature SOI MOSFET intrinsic gate capacitances. Results regarding threshold voltage extraction, impact ionization effects and subthreshold capacitance are discussed.
Keywords
MOSFET; high-temperature electronics; impact ionisation; silicon-on-insulator; thin film transistors; high-temperature gate capacitance; impact ionization effects; intrinsic gate capacitance; subthreshold capacitance; thin-film SOI MOSFET; threshold voltage extraction; Capacitance measurement; Circuit simulation; Impact ionization; Integrated circuit measurements; Leakage current; MOSFET circuits; Substrates; Temperature sensors; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435589
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