Self-Heating effects on Static and Dynamic SOI Operation

Author

Yachou, D. ; Gautier, J. ; Raynaud, C.

Author_Institution

LETI, CEA - Technol. Av., Grenoble, France

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

695

Lastpage

698

Abstract

In SOI devices heat evacuation is limited by a buried oxide layer. The consequence is the well known Self Heating (SH) phenomenon [1] [2] [3]. We have in depth analysed the corresponding thermal effects on static and dynamic modes and the implications for the device operation.

Keywords

buried layers; semiconductor device models; SH phenomenon; SOI devices heat evacuation; buried oxide layer; dynamic SOI operation; dynamic mode; in depth analysis; self heating phenomenon; self-heating effects; static SOI operation; static mode; thermal effects; Attenuation; Decorrelation; Heating; Impact ionization; Nonlinear distortion; Parameter extraction; Proposals; Temperature dependence; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435591

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915430