• DocumentCode
    1915623
  • Title

    Performance of 0.2 μm planar doped pseudomorphic and lattice matched HEMTs on GaAs and InP

  • Author

    Baeyens, Y. ; Skrabka, T. ; Van Hove, M. ; De Raedt, W. ; Nauwelaers, B. ; Van Rossum, M.

  • Author_Institution
    Div. ESAT-TELEMIC, K.U. Leuven, Leuven, Belgium
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    753
  • Lastpage
    756
  • Abstract
    Two types of HEMT transistors with 0.2 μm gatelength have been fabricated: pseudomorphic (PM) on GaAs and lattice matched (LM) on InP. An extensive study of the DC and HF-characteristics shows the higher potential of the InP based devices: extrinsic fT -values up to 141 GHz were obtained. The monolithic integration of the InP LM HEMTs is illustrated by the performance of a coplanar distributed amplifier.
  • Keywords
    III-V semiconductors; distributed amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; DC characteristics; GaAs-InP; HF characteristics; coplanar distributed amplifier; lattice matched HEMT; planar doped pseudomorphic HEMT; size 0.2 mum; Fabrication; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Ohmic contacts; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915623