Broad Transconductance Plateau Region and High Current GaAs/InGaAs Pseudomorphic HENT´s Utilizing A Graded Inx Ga1-xAs Channel

Author

Hsu, W.-C. ; Shieh, H.M. ; Wu, Y.H. ; Hsu, R.T.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

761

Lastpage

764

Abstract

A new δ-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) utilizing a graded In composition in In_xGa_1-xAs quantum well grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was demonstrated. For a gate geometry of 2 × 100 μm², the studied new structure revealed superior extrinsic transconductance and saturation current density of 175 mS/mm and 500 mA/mm at 300 K respectively. The transconductance versus gate bias profile showed a flat plateau region of 2 V. High breakdown (>;10 V) and low leakage current were also observed.

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; high electron mobility transistors; indium compounds; quantum well devices; GaAs-InGaAs; In_xGa_1-xAs; LP-MOCVD; broad transconductance plateau region; extrinsic transconductance; graded channel; high current pseudomorphic HEMT; low-pressure metalorganic chemical vapor deposition; pseudomorphic high electron mobility transistor; quantum well; saturation current density; temperature 300 K; voltage 2 V; Chemical vapor deposition; Current density; Electric breakdown; Electron mobility; Gallium arsenide; Geometry; Indium gallium arsenide; Leakage current; PHEMTs; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435602