Experiments with Floating Gate Devices in 0.18 and 0.13 Micron CMOS Technologies

In this paper, we characterize the behaviour of floating gate devices on 0.18 and 0.13 micron technologies. Due to the thin oxide in the 0.18 micron devices, the floating gate devices cannot be used for long term storage, but may be applied in circuits where large time constants are needed. Our experiments show that discharge times are in the order of one hour and that the time depends on the area of devices connected to the floating gate. Experiments with thick oxide transistors with 0.13 micron technology show that the devices can be programmed using only positive voltages