• DocumentCode
    1915732
  • Title

    Cross-Sensitivity Elimination in a 3-Dimensional Magnetic Sensor

  • Author

    Wang, B. ; Misra, D.

  • Author_Institution
    Electr. & Comput. Eng. Dept., New Jersey Inst. of Technol., Newark, NJ, USA
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    775
  • Lastpage
    778
  • Abstract
    In a 3-dimensional integrated magnetic sensor cross-axis sensitivities among the various components of the magnetic field have been a practical design problem. This paper describes the elimination of any cross-sensitivity if a 3 dimensional magnetic sensor is implemented in BiCMOS technology. A device is designed and fabricated by placing a split-collector magnetotransistor and a split drain MOSFET adjacent to each other to detect the three components of the magnetic field vector.
  • Keywords
    BiCMOS integrated circuits; MOSFET; magnetic field measurement; magnetic sensors; three-dimensional integrated circuits; 3-dimensional integrated magnetic sensor; BiCMOS technology; cross-axis sensitivity elimination; magnetic field vector; split-collector magnetotransistor; split-drain MOSFET; BiCMOS integrated circuits; CMOS technology; Design engineering; Lorentz covariance; MOS devices; MOSFETs; Magnetic devices; Magnetic fields; Magnetic sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435605