• DocumentCode
    1915761
  • Title

    Study of a new SiO2 etching process allowing deep and anisotropic trenches. Optimization of new reactor parameters by means of actinometry.

  • Author

    Morgenroth, L. ; Peccoud, L. ; Baussand, P.

  • Author_Institution
    LETI, CEA-Technol. Av., Grenoble, France
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    779
  • Lastpage
    782
  • Abstract
    This study characterizes the SiO2 etching by two gases C2F6 and CF4, in an experimental high-density reactor. The effect of some experimental parameter variations on the etching rate and F and CF2 radical concentration, has been studied and correlated to the self-induced voltage and the substrate temperature.
  • Keywords
    carbon compounds; radiometry; reactors (electric); silicon compounds; sputter etching; C2F6; CF4; SiO2; actinometry; anisotropic trenches; deep trenches; etching process; etching rate; experimental parameter variations; high-density reactor; radical concentration; reactor parameters; self-induced voltage; substrate temperature; Anisotropic magnetoresistance; Electrodes; Etching; Fault location; Fluid flow; Gases; Inductors; Spectroscopy; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435606
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915761