DocumentCode

1915822

Title

Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs

Author

Oberhuber, R. ; Zandler, G. ; Vogl, P.

Author_Institution

Technische Universit¨at M¨unchen, Garching, Germany

fYear

1998

fDate

8-10 Sept. 1998

Firstpage

524

Lastpage

527

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location

Bordeaux, France

Print_ISBN

2-86332-234-6

Type

conf

Filename

1503604