High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs

Author

Tran, L. ; Isobe, R. ; Delaney, M. ; Rhodes, R. ; Jang, Daeung ; Brown, J. ; Nguyen, L. ; Le, M. ; Thompson, M. ; Liu, T.

Author_Institution

Hughes Space & Commun. Co., El Segundo, CA, USA

fYear

1996

fDate

17-19 June 1996

Firstpage

133

Lastpage

136

Abstract

A millimeter-wave MMIC low noise amplifier chip set has been developed. Based on the InP HEMT technology, these LNAs provide state-of-the-art performance as well as excellent yield and repeatability. With greater than 50% chip yield, a three-stage Q-band LNA design achieved 26 to 31 dB of gain from 42 to 50 GHz and 1.8 dB average noise figure from 43.3 to 45.7 GHz. In addition, there are six other LNA designs including a four-stage V-band LNA with 28 dB of gain and 2.3 dB noise figure and a two-stage balanced Q-band LNA that provided 17 dB of gain and has greater than 61% yield.

Keywords

HEMT integrated circuits; III-V semiconductors; differential amplifiers; field effect MIMIC; indium compounds; integrated circuit noise; integrated circuit reliability; integrated circuit yield; millimetre wave amplifiers; satellite communication; 1.8 dB; 17 dB; 2.3 dB; 26 to 31 dB; 28 dB; 42 to 50 GHz; 43.3 to 45.7 GHz; HEMTs; InP; LNAs; Q-band; V-band; average noise figure; low noise amplifier; millimeter-wave MMIC; repeatability; two-stage balanced circuit; yield; Circuit testing; HEMTs; Indium phosphide; Laboratories; MMICs; MODFETs; Millimeter wave communication; Millimeter wave technology; Noise figure; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506320

Filename

506320