A Ka-band GaInP/GaAs HBT four-stage LNA

Author

Freundorfer, A.P. ; Jamani, Y. ; Falt, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada

fYear

1996

fDate

17-19 June 1996

Firstpage

141

Lastpage

144

Abstract

A Ka-band GaInP/GaAs HBT four-stage MMIC LNA has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. An average noise figure of 6 dB from 27 GHz to 30 GHz, and a gain of greater than 15 dB were measured. These results are the best reported at Ka-band for a LNA using transistors from digital HBT library.

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; integrated circuit noise; transceivers; 27 to 30 GHz; 6 dB; GaInP-GaAs; HBT four-stage LNA; Ka-band; MMIC; analog transmission; average noise figure; digital HBT library; digital transmission; local multipoint distribution systems; multifunction T/R module; Circuit noise; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Integrated circuit modeling; Integrated circuit noise; Laboratories; Millimeter wave transistors; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506322

Filename

506322