A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC LNA design

Author

Yoshinaga, H. ; Kashiwabara, Y. ; Abe, B. ; Shibata, K.

Author_Institution

Komukai Works, Toshiba Corp., Kawasaki, Japan

fYear

1996

fDate

17-19 June 1996

Firstpage

149

Lastpage

152

Abstract

An on-wafer tuning method has been applied to derive noise parameters of pseudomorphic HEMTs measured at W-band and K-band. As an application of the method, a K-band MMIC LNA with 1.6 dB NF and greater than 32 dB gain has been successfully developed.

Keywords

HEMT integrated circuits; MMIC amplifiers; S-parameters; circuit tuning; electric noise measurement; equivalent circuits; field effect MIMIC; high electron mobility transistors; integrated circuit noise; integrated circuit testing; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device noise; semiconductor device testing; 1.6 dB; 19 to 21 GHz; 30 to 94 GHz; 32 dB; EHF; K-band; MMIC LNA design; PHEMTs; SHF; W-band; low-noise HEMTs; millimeter-wave HEMTs; noise parameters; onwafer tuning method; pseudomorphic HEMT; Circuit noise; Equivalent circuits; Frequency; HEMTs; Impedance; K-band; MODFETs; Millimeter wave technology; Noise measurement; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506324

Filename

506324