DocumentCode
1916938
Title
Technology Requirements for Next Decade Flash Memories
Author
Yoshikawa, Kuniyoshi
Author_Institution
Toshiba Corporation, Yokohama, Japan
fYear
2000
fDate
11-13 September 2000
Firstpage
72
Lastpage
75
Keywords
Dielectrics; Electrons; Ferroelectric films; Flash memory; Guidelines; Leakage current; Nonvolatile memory; Random access memory; Reliability engineering; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194721
Filename
1503651
Link To Document