DocumentCode

1917314

Title

Degradation of Si MOSFET Gate Oxides by Ion Implantation

Author

Ponomarev, Y.V. ; Stolk, P.A. ; Dachs, C.J.J. ; Woerlee, P.H.

Author_Institution

Philips Research Laboratories, Eindhoven, The Netherlands

fYear

2000

fDate

11-13 September 2000

Firstpage

128

Lastpage

131

Keywords

Annealing; Boron; Degradation; Dielectric losses; Doping; Energy exchange; Implants; Ion implantation; Lead compounds; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

conf

DOI

10.1109/ESSDERC.2000.194731

Filename

1503661