• DocumentCode
    1917647
  • Title

    Modelling of Intrinsic Aluminum Diffusion for Future Power Devices

  • Author

    Krause, O. ; Pichler, P. ; Ryssel, H.

  • Author_Institution
    University Erlangen-Nuremberg, Germany
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    176
  • Lastpage
    179
  • Keywords
    Aluminum; Electron devices; Fabrication; Impurities; Integrated circuit modeling; Integrated circuit technology; Oxidation; Silicon; Space charge; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194743
  • Filename
    1503673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917647