DocumentCode
1918505
Title
Study of Local Silicon Oxidation with Calibrated Nitride Model
Author
Ferreira, P. ; Senez, V. ; Collard, D. ; Baccus, B.
Author_Institution
IEMN-ISEN, UMR CNRS, 41 boulevard Vauban, 59046 Lille cedex, France
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
259
Lastpage
262
Abstract
Typical 2D effects such as oxide thinning and bird´s beak size decrease with nitride masks and windows size reduction are observed in submicron isolation structures. Such phenomena depend on the stresses generated by the oxidation process and consequently on the mechanical properties of the IC-materials. In this paper, an elastovisco-plastic modelling of the silicon oxidation is used for the calibration of the nitride properties and applied to various LOCOS processes.
Keywords
Calibration; Kinetic theory; Mechanical factors; Oxidation; Plastics; Shape; Silicon; Stress; Temperature dependence; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435715
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