• DocumentCode
    1918572
  • Title

    Effect of Silicidation Schemes on Interface Contact Resistance

  • Author

    Wang, Q.F. ; Lauwers, A. ; Deweerdt, B. ; Maex, K.

  • Author_Institution
    IMEC, Kapeldreef 75, 3001 Leuven, Belgium
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    283
  • Lastpage
    286
  • Abstract
    The effect of silicidation schemes on interface contact resistance has been examined. Evaluation of conventional process (pre-formed junctions), pre-amorphization process, and concurrent process (with silicidation and junction formation at the same time) impacts on interface contact resistance are presented. It is found that preamorphization process using Ge improves the CoSi2/Si contact resistance slightly compared to the conventional process. The concurrent process yields a significantly higher value for TiSi2/p+ contacts.
  • Keywords
    Annealing; CMOS process; Cobalt; Contact resistance; Current measurement; Electrical resistance measurement; Silicidation; Silicon; Sputtering; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1918572