DocumentCode
1918803
Title
Accurate Doping Profile Extraction Near the Si/SiO2 Interface with a Novel Low Temperature C-V Technique
Author
Pirovano, A. ; Lacaita, A.L. ; Pacelli, A. ; Benvenuti, A.
Author_Institution
Politecnico di Milano, Italy
fYear
2000
fDate
11-13 September 2000
Firstpage
364
Lastpage
367
Keywords
Capacitance; Capacitance-voltage characteristics; Doping profiles; Inverse problems; Optimization; Research and development; Shape; Spatial resolution; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194790
Filename
1503720
Link To Document