High-Voltage Drain Extended MOS Transistors for 0.18 um Logic CMOS Process

Author

Mitros, J. ; Tsai, C.Y. ; Shichijo, H. ; Kunz, K. ; Morton, A. ; Goodpaster, D. ; Mosher, D. ; Efland, T.

Author_Institution

Texas Instruments Inc., Dallas, TX, USA

fYear

2000

fDate

11-13 September 2000

Firstpage

376

Lastpage

379

Keywords

Breakdown voltage; CMOS logic circuits; CMOS process; CMOS technology; Implants; Instruments; MOSFETs; Medical simulation; Production; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194793

Filename

1503723

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