P2–15: Electronic emission of transparent nano-diamond film prepared by sol-gel method

Author

Zhang, Xiu-xia ; Lu, Bing-heng ; Zhu, Chang-chun

Author_Institution

Sch. of Mech. Eng., Xi´´an Jiaotong Univ., Xi´´an, China

fYear

2010

fDate

26-30 July 2010

Firstpage

151

Lastpage

152

Abstract

In this paper, the sol-gel method was adopted preparation uniform Nano-diamond films on large glass. The mixture of Nano-graphite and organic vehicles doped to nano-diamond paste and further ultrasonic dispersed. Through test a variety different proportion of Nano-diamond paste, Nano-diamond film was prepared by sol-gel method at 3000-7000/min. The special sintering and annealing were taken to improve the field emission. The samples of Nano-diamond film were micro-analyzed by SEM and tested the I-V characteristics in chamber maintained at 10^-6 pa.

Keywords

annealing; diamond; electron field emission; elemental semiconductors; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; semiconductor thin films; sintering; sol-gel processing; transparency; ultrasonic applications; wide band gap semiconductors; C; I-V characteristics; SEM; annealing; electronic field emission; nanodiamond paste; nanographite; pressure 0.000001 Pa; sintering; sol-gel method; transparent nanodiamond film; ultrasonic dispersion; Annealing; Cathodes; Diamond-like carbon; Films; Glass; Surface morphology; electronic Emission; sol-gel method; transparent Nano-diamond film;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Conference_Location

Palo Alto, CA

Print_ISBN

978-1-4244-7889-7

Electronic_ISBN

978-1-4244-7888-0

Type

conf

DOI

10.1109/IVNC.2010.5563153

Filename

5563153