P2–13: Field emission characteristics of carbon nanotube forest on etched Si substrate

Author

Lee, Jungwoo ; Park, Taehee ; Lee, Jongtaek ; Ahn, Juwon ; Shin, Mingyeong ; Yi, Whikun

Author_Institution

Dept. of Chem., Hanyang Univ., Seoul, South Korea

fYear

2010

fDate

26-30 July 2010

Firstpage

147

Lastpage

148

Abstract

In this work, we investigate the field emission characteristics of carbon nanotube forest on three types substrate: (1) mirror polished, (2) chemically etched (large pattern) and (3) chemically etched (small pattern) Si substrate. The surface morphology of CNTs forest was characterized by scanning electron microscopy (SEM), surface chemical state and electronic structure phase analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.

Keywords

Raman spectroscopy; X-ray photoelectron spectra; carbon nanotubes; etching; field emission; polishing; scanning electron microscopy; surface morphology; C; Raman spectroscopy; Si; X-ray photoelectron spectroscopy; carbon nanotube forest; chemical etching; electronic structure; field emission; mirror polishing; scanning electron microscopy; surface chemical state; surface morphology; Carbon nanotubes; Inductors; Iron; Mirrors; Morphology; Silicon; Substrates; Field emission; carbon nanotube; chemical etched Si substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Conference_Location

Palo Alto, CA

Print_ISBN

978-1-4244-7889-7

Electronic_ISBN

978-1-4244-7888-0

Type

conf

DOI

10.1109/IVNC.2010.5563155

Filename

5563155