DocumentCode
1919996
Title
P1–3: Optimization of structure parameters of gated nanowire field emitters for field emission display application
Author
Liu, Liyuan ; Chen, Jun ; Deng, Shaozhi ; Xu, Ningsheng
Author_Institution
Guangdong Province Key Lab. of Display Mater. &, Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2010
fDate
26-30 July 2010
Firstpage
34
Lastpage
35
Abstract
The optimal parameters of gated nanowire field emitters for field emission display application were studied. The device parameters such as geometric parameters of the nanowire, distance between gate electrode and cathode, the cathode to anode distance were simulated. It is found the nanowire height has an optimal value due to the combined effects of geometric field enhancement and gate induced electric field.
Keywords
anodes; cathodes; electrodes; field emission displays; nanowires; anode distance; cathode; field emission display; gate electrode; gate induced electric field; gated nanowire field emitters; geometric field enhancement; structure parameter optimisation; Anodes; Cathodes; Electric fields; Logic gates; Nanoscale devices; Radiation detectors; field emission display; nanowire emitter; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563169
Filename
5563169
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