P1–10: An estimation of the application potential for spherical vacuum microelectronics device at THz regime

On the basis of home and abroad relative works, the Laplace equation, and the basic definition of the electron transit time, we derived mathematically the formulae of potential distribution function and the formulae of the electron transit time function inside an ideal spherical vacuum microelectronics diode. Using our formulae, a rough value of the electron transit time for an ideal spherical vacuum microelectronics diode has been calculated. By introducing a concept of an equivalent diode, a rough value of the electron transit time inside a spherical vacuum microelectronics triode has also been calculated. From those values, the application potential of those vacuum microelectronics diode or triode can be estimated at MW and THz regime.