Device characterization and performance of 1200V/45A SiC JFET module

Author

Baliga, Vinod ; Hazra, Swarnali ; Singh, Sushil ; Roy, Sandip ; Bhattacharya, Surya ; Paulakonis, Joseph ; Notani, Shailesh

Author_Institution

FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

273

Lastpage

278

Abstract

This paper evaluates the hard-switching performance of a novel cascode configuration of a 1200V/45A SiC JFET module. The device is first characterized and then switched up to 600V through double pulse testing. The capacitive effects of the device are analyzed and account for a significant current spike during turn-on. The switching behavior due to the gate drive circuitintroduction of varied gate resistances is discussed and analyzed. The switching behavior allows for the extraction of rise time, fall time, dV/dt, di/dt, and the switching losses - E_on and E_off - while applying these varying gate resistances. The gate drive circuit is discussed and the hardware and test setup are shown and presented.

Keywords

junction gate field effect transistors; silicon compounds; wide band gap semiconductors; JFET module; SiC; capacitive effects; cascode configuration; current 45 A; current spike; device characterization; double pulse testing; gate drive circuit; gate resistances; hard-switching performance; switching behavior; switching losses; voltage 1200 V; Current measurement; JFETs; Logic gates; MOSFET; Performance evaluation; Silicon carbide; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6646711

Filename

6646711