DocumentCode
1920881
Title
6.4: Fabrication of 4H-SiC cold field emitter arrays
Author
Borsa, Tomoko ; Van Zeghbroeck, Bart
Author_Institution
Dept. of Electr., Comput. & Energy Eng., Univ. of Colorado at Boulder, Boulder, CO, USA
fYear
2010
fDate
26-30 July 2010
Firstpage
102
Lastpage
103
Abstract
A new fabrication method of SiC field emitter arrays has been developed. The new method involves the formation of three-dimensional silicon dioxide masks, dry etching, and tip sharpening. The field emitter arrays were successfully fabricated on 4H-SiC substrates with tip diameter less than 10 nm.
Keywords
etching; field emitter arrays; silicon compounds; wide band gap semiconductors; 4H-SiC cold field emitter array fabrication; SiC; dry etching; three-dimensional silicon dioxide masks; tip sharpening; Chromium; Fabrication; Field emitter arrays; Needles; Silicon carbide; Substrates; SiC; dry etch; field emitter arrays; isotropic etch; sharpening;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563204
Filename
5563204
Link To Document