DocumentCode
1920902
Title
Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation
Author
Jungemann, C. ; Neinhues, B. ; Meinerzhagen, B.
Author_Institution
University of Bremen, Germany
fYear
2002
fDate
24-26 September 2002
Firstpage
71
Lastpage
74
Keywords
Analytical models; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Impact ionization; Radio frequency; Scattering; Semiconductor process modeling; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194873
Filename
1503803
Link To Document