• DocumentCode
    1921135
  • Title

    Effect of grain size on the grain boundary resistance of undoped barium titanate ceramics

  • Author

    Lee, Hee Young ; Burton, Larry C.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Yeungnam Univ., Kyongsan, South Korea
  • fYear
    1992
  • fDate
    30 Aug-2 Sep 1992
  • Firstpage
    98
  • Lastpage
    102
  • Abstract
    The effect of grain size on the grain boundary resistance of undoped BaTiO3 ceramics fired at 1270~1410°C was investigated, assuming cubic grains sharing their faces with adjacent grains. A two-step firing technique was used to produce samples of different grain sizes ranging from about 1 to over 40 μm. Grain boundary resistance values were estimated from the complex impedance plots of samples measured at about 455°C. It was found that the grain boundary resistivity is approximately constant and is in the range of 2.7×10-3~2.8×10-2 if the average grain size is larger than 1 μm. It was also found that the grain resistivity is in the range of 37~180 Ω-m2 at 455°C when the grain is partially depleted of mobile charge. When the grain was smaller than about 1 μm, it was totally depleted of mobile charge, and, as a result, the grain boundary controlled the overall resistance. In this case, the grain boundary layer extended to the center of the grain, and the situation might be viewed as the disappearance of the grain
  • Keywords
    barium compounds; ceramics; electrical conductivity of crystalline semiconductors and insulators; grain boundaries; grain size; 1270 to 1410 degC; complex impedance plots; cubic grains; grain boundary layer; grain boundary resistance; grain boundary resistivity; grain size; mobile charge; two-step firing technique; undoped BaTiO3 ceramics; Barium; Capacitors; Ceramics; Chemical technology; Conductivity; Degradation; Electric resistance; Grain boundaries; Grain size; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
  • Conference_Location
    Greenville, SC
  • Print_ISBN
    0-7803-0465-9
  • Type

    conf

  • DOI
    10.1109/ISAF.1992.300632
  • Filename
    300632