DocumentCode
1921168
Title
Polarization-Independent, High-Contrast InGaAsP/InGaAsP MQW Waveguide Modulator
Author
Cacciatore, C. ; Campi, D. ; Coriasso, C. ; Neitzert, H.C. ; Rigo, C. ; Stano, A.
Author_Institution
CSELT-Centro Studi e Laboratori Telecomunicazioni Via G. Reiss Romoli, 274, 10148 Torino, Italy
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
723
Lastpage
726
Abstract
In this work we demonstrate the polarization-insensitive operation of a multiple-quantum well electroabsorption modulator based on unstrained InGaAsP/InGaAsP material. Very large and shallow quantum wells were grown and used to generate electroabsorptive behaviour which is due to the merging of two effects, precisely: the quantum confined Stark effect and the Franz-Keldysh effect. Within this scheme TE and TM polarizations behave similarly. High-efficiency performance is reported for wavelengths around 1.55 ¿m.
Keywords
Indium gallium arsenide; Indium phosphide; Intensity modulation; Optical modulation; Optical waveguides; Photoconductivity; Polarization; Quantum well devices; Stark effect; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435815
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