SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10um x 10um Pillars

Author

Straube, U.N. ; Waite, A.M. ; Lloyd, N. ; Croucher, S.G. ; Tang, Y.T. ; Evans, A.G.R. ; Grasby, T.J. ; Whall, T.E. ; Parker, E. C H ; Norris, D. ; Cullis, T.

Author_Institution

University of Southampton, United Kingdom

fYear

2002

fDate

24-26 September 2002

Firstpage

123

Lastpage

126

Keywords

Buffer layers; Computer science; Dry etching; Fabrication; Germanium silicon alloys; Implants; MOSFETs; Physics; Silicon germanium; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194885

Filename

1503815

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