• DocumentCode
    1921323
  • Title

    Si/SiGe Modulation Doped Structures by Gas Source Molecular Beam Epitaxy using Arsenic as a Donor

  • Author

    Matsumura, A. ; Prasad, R.S. ; Thornton, T.J. ; Fernández, J.M. ; Xie, M.H. ; Zhang, X. ; Zhang, J. ; Joyce, B.A.

  • Author_Institution
    Electrical Engineering Department, Imperial College, London SW7, UK; Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, London SW7, UK; Nippon Steel Corp., 5-10-1 Fuchinobe, Sagamihara-shi, Kanagawa 229, Japan
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    741
  • Lastpage
    744
  • Abstract
    We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using, for the first time, arsenic as an n-type dopant. The layers are characterised by magnetotransport measurements and SIMS analysis. The latter shows an arsenic concentration in excess of 1019 cm¿3 along with strong surface segregation.
  • Keywords
    Buffer layers; Electrical resistance measurement; Electron mobility; Epitaxial layers; Germanium silicon alloys; Magnetic field measurement; Molecular beam epitaxial growth; Silicon germanium; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435821
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921323