• DocumentCode
    1921923
  • Title

    Influence of Nitride Passivation on the Performance of InAlAs/InGaAs HEMTs

  • Author

    Baeyens, Y. ; Van Hove, Marleen ; De Raedt, W. ; Schreurs, D. ; Nauwelaers, B. ; Van Rossum, M.

  • Author_Institution
    K.U.Leuven, ESAT-TELEMIC, K. Mercierlaan 94, B-3001 Leuven, Belgium
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    803
  • Lastpage
    806
  • Abstract
    AlInAs/InGaAs HEMTs with different gate lengths, ranging from 0.2 to 1.0 ¿m, and on different layer structures were fabricated. The DC- and HF-characteristics were systematically investigated before and after the passivation with PECVD Si3N4. The passivation resulted in an increase in parasitics such as the feedback capacitance (Cgd) and the drain delay time, leading to a slight degradation of the extrinsic fT-values. The intrinsic behaviour of the devices was consistently improved after passivation due to the increase of the transconductance.
  • Keywords
    Degradation; Delay effects; Feedback; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Parasitic capacitance; Passivation; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921923