Measurement of electro-optic coefficient of ferroelectric PLZT thin films

Author

Luo, Wei-Gen ; Ding, Ai-Li ; Zhang, Rui-Tao ; Chan, K.S. ; Siu, G.G.

Author_Institution

Shanghai Inst. of Ceramics, Chinese Acad. of Sci., China

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

233

Lastpage

235

Abstract

A novel and simple technique using a magnetooptical modulator based on the Faraday effect is proposed for measuring the electrooptic coefficient (EO) of ferroelectric PLZT (La-doped lead zirconate titanate) thin films. This technique measures phase retardation shift by determining the frequency change of the modulated light. The main error of the measuring system comes from reading goniometers with a precision of 10^-5 radians. Thus, the measurable retardation of the optical path is the order of a few angstroms. Experimental results are presented for thin ferroelectric PLZT films made by magnetron sputtering. The quadratic EO coefficient of the PLZT films varies in the range of 0.1×10^-16 to 1.0×10^-16 (m/v) ², depending on the sputtering conditions

Keywords

Faraday effect; electro-optical effects; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; sputtered coatings; Faraday effect; La-doped lead zirconate titanate; PLZT; PbLaZrO3TiO3; electro-optic coefficient; ferroelectric PLZT thin films; magnetooptical modulator; magnetron sputtering; optical path; phase retardation shift; quadratic EO coefficient; Electrooptic effects; Electrooptic modulators; Faraday effect; Ferroelectric films; Ferroelectric materials; Magnetic modulators; Magnetooptic effects; Optical films; Optical modulation; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300672

Filename

300672