• DocumentCode
    1921960
  • Title

    Degradation of AlInAs HEMT Structures Induced by SiO2 Mask Layer Deposition

  • Author

    Haddab, Y. ; Spicher, J. ; Beck, M.

  • Author_Institution
    Institut de Micro et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    1013
  • Lastpage
    1016
  • Abstract
    We have studied the influence of SiO2 deposition on the transport properties of AlInAs HEMT layers by means of Hall effect and deep-level transient spectroscopy measurements. We observed that a thermal treatment corresponding to a regrowth after SiO2 deposition induced a degradation of the electron transport properties. The diffusion of a deep level from the SiO2 is the probable cause of this degradation. This deep level is probably oxygen or an oxygen-related defect complex.
  • Keywords
    Annealing; Electrons; HEMTs; Hall effect; Magnetic field measurement; Optical fiber communication; Performance evaluation; Spectroscopy; Temperature; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921960