A Scalable Physically based Analytical DMOS Transistor Model

An analytical DMOS model for circuit simulation based on a subcircuit approach is extended for a variable number of cells. The subcircuit itself consists of a minimal number of elements whose models are physically based and optimized for the special DMOS structure. The DC-description is continous (smooth transitions between the different operating regions of the device), the AC-description is charge based and the model also accounts for temperature effects. Over a wide range of cell numbers the same parameters can be used due to the scalability of the model.