DocumentCode

1922325

Title

Tunnelling and Impact Ionization in Scaled Double Doped PHEMTs

Author

Kalna, K. ; Asenov, A.

Author_Institution

University of Glasgow, United Kingdom

fYear

2002

fDate

24-26 September 2002

Firstpage

303

Lastpage

306

Keywords

Charge carrier density; Doping; Electric breakdown; Electron mobility; HEMTs; Impact ionization; MODFETs; PHEMTs; Transconductance; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

conf

DOI

10.1109/ESSDERC.2002.194929

Filename

1503859