• DocumentCode
    1922535
  • Title

    Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar Transistors

  • Author

    Prinz, E.J. ; Sturm, J.C.

  • Author_Institution
    Dept. of Electrical Engineering, Princeton University
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Bipolar transistors; Boron; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Ice; Photonic band gap; Silicon germanium; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664678
  • Filename
    664678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1922535