DocumentCode
1922553
Title
Effects of Random Discrete Impurities in Ultra-short MOSFET Using 3D Monte Carlo Simulation
Author
Barraud, Sylvain ; Dollfus, Philippe ; Galdin, Sylvie ; Hesto, Patrice
Author_Institution
IEF-CNRS, Universite Paris sud, Orsay, France
fYear
2002
fDate
24-26 September 2002
Firstpage
343
Lastpage
346
Keywords
Charge carrier processes; Computational modeling; Doping; Electrons; Fluctuations; Impurities; MOSFET circuits; Particle scattering; Poisson equations; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194939
Filename
1503869
Link To Document