MOCVD growth of BaTiO3 in an 8" single-wafer CVD reactor

A reduced-pressure MOCVD (metal-organic chemical vapor deposition) process for the growth of BaSrTiO₃ thin films was developed in a 2-in inverted-vertical reactor was developed, and preliminary studies were carried out to scale this process to a commercially available single-wafer tool. Novel process technology was used as the CVD sources were dissolved in a liquid which was measured into a vaporizer with a high-precision pump. Implementation of this process gave uniform deposition of perovskite-phase BaTiO₃ over the entire surface of a 150-mm Pt-metallized Si wafer. These films exhibited crystallographic texture in the [100] direction and thickness uniformity better than ±10%. The BaSrTiO₃ thin films grown in the 2-in reactor were predominantly [111] oriented: dielectric constants greater than 400 and DC leakage of 7×10^-6 A/cm were achieved