Monte Carlo Simulation of Channeled Phosphorus Implantations in Silicon

A comprehensive study of 25 keV phosphorus implantation into crystalline silicon is presented. Phosphorus has been implanted with doses between 10¹³ cm^¿2 and 10¹⁵ cm^¿2 along the channeling directions [110], [111], [211] and along (111)-planes. In addition, implantations into (100)-and (110)-Si have been performed with tilt angles of 7° and 38°, respectively. The doping profiles have been measured with SIMS. The experimental results are analyzed by Monte Carlo simulations using the simulator IMSIL. The channeling experiments allow to study the electronic stopping power by observing the range in the various channeling directions, and to study the dechanneling of ions due to damage accumulation by observing the decrease in the relative magnitude of the channeling tail with increasing dose. The tilted implantations are used to investigate whether the scattering of ions into the channels is correctly described. Models previously proposed for boron implantations are applied to the simulation of our phosphorus experiments, and the parameters for phosphorus ions are determined.