Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV

Author

Rahimo, M. ; Kopta, A. ; Eicher, S. ; Kaminski, N. ; Bauer, F. ; Schlapbach, U. ; Linder, S.

Author_Institution

ABB Switzerland Ltd. Semicond., Lenzburg, Switzerland

fYear

2002

fDate

2002

Firstpage

41

Lastpage

44

Abstract

In this paper, we demonstrate for the first time, a planar high voltage IGBT and freewheeling diode chip set with a blocking capability exceeding 8000 V. The main aim is to show that a high performance IGBT can be achieved at this voltage level by implementing the "soft-punch-through" (SPT) concept. Details of the IGBT and diode design and performance are presented. This includes, experimental results for the static and dynamic characteristics under normal and SOA conditions, detailed trade-off curves for a number of design parameters, and cosmic ray induced failure results for the IGBT and diode.

Keywords

cosmic ray interactions; insulated gate bipolar transistors; insulated gate field effect transistors; power bipolar transistors; power semiconductor diodes; semiconductor device measurement; semiconductor device reliability; 8 kV; IGBT design; IGBT performance; SOA conditions; blocking capability; cosmic ray induced failure; design parameters; diode design; diode performance; dynamic characteristics; freewheeling diode chip set; high voltage IGBTs; high voltage diodes; planar high voltage IGBT; soft-punch-through concept; static characteristics; trade-off curves; voltage level; Bipolar transistor circuits; Conductivity; Insulated gate bipolar transistors; MOSFETs; Power system dynamics; Power systems; Semiconductor diodes; Semiconductor optical amplifiers; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016166

Filename

1016166