A frequency-domain study on the effect of DC-link decoupling capacitors

Author

Zheng Chen ; Boroyevich, Dushan ; Mattavelli, Paolo ; Ngo, Khai

Author_Institution

Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

1886

Lastpage

1893

Abstract

DC-link decoupling capacitors are generally placed near the power switches in the converter to minimize the parasitic ringing and voltage overshoot on the devices. In this paper, the influence of decoupling capacitors on the turn-off parasitic ringing of power MOSFETs is studied in the frequency domain based on a small-signal modeling approach. This new angle helps explain the effect of these capacitors in a simpler and more straightforward way compared to the traditional time-domain analysis, and provides a deeper insight into the problem. A rule of thumb about the selection of effective decoupling capacitance value can also be derived from this study.

Keywords

MOSFET; capacitors; power convertors; dc-link decoupling capacitors effect; decoupling capacitance value effective; decoupling capacitors; frequency domain; frequency-domain study; parasitic ringing; power MOSFET; power converter; power switches; small-signal modeling approach; time-domain analysis; turn-off parasitic ringing; voltage overshoot; Capacitance; Capacitors; Integrated circuit modeling; MOSFET; Resonant frequency; Semiconductor device modeling; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6646938

Filename

6646938