A wafer-level system integration technology for flexible pseudo-SOC incorporates MEMS-CMOS heterogeneous devices

A flexible pseudo-SoC which integrates electrostatic MEMS and its driver CMOS-LSI for mobile electronics device applications has been developed. From the experiments, the pseudo-SoC process has succeeded to form a fine-pitch on-chip global layer on the MEMS and CMOS-LSI embedded in the epoxy resin and to realize total thickness of 100 μm. This paper reports the pseudo-SoC that overcomes the limitation of system integration and provides the complementary advantages of SiP and SoC within the results of a highly-integrated flexible pseudo-SoC incorporating electrostatic MEMS and its driver CMOS-LSI for mobile electronics applications.