Enhanced IGBT self clamped inductive switching (SCIS) capability through vertical doping profile and cell optimization

Author

Yedinak, J. ; Wojslawowicz, J. ; Czeck, B. ; Baran, R. ; Reichl, D. ; Lange, D. ; Shenoy, P. ; Doiny, G.

Author_Institution

Discrete Power Product Dev., Fairchild Semicond., Mountaintop, PA, USA

fYear

2002

fDate

2002

Firstpage

289

Lastpage

292

Abstract

In this paper, we analyze the impact of cell and vertical structure design to enhance the energy handling capability of the IGBT used in automotive ignition applications. The self-clamped inductive switching (SCIS) capability of the IGBT is presented both experimentally and through non-isothermal two-dimensional numerical simulations. It is shown that the SCIS energy density capability can be increased by up to 35% by optimization of the cell and vertical structure.

Keywords

automotive electronics; doping profiles; electric ignition; insulated gate bipolar transistors; numerical analysis; optimisation; power bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; IGBT SCIS capability; IGBT self clamped inductive switching capability; SCIS energy density capability; automotive ignition applications; cell design; cell optimization; energy handling capability; nonisothermal 2D numerical simulations; vertical doping profile; vertical structure design; Automotive engineering; Clamps; Coils; Design optimization; Doping profiles; Ignition; Insulated gate bipolar transistors; Medical simulation; Power semiconductor switches; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on

Print_ISBN

0-7803-7318-9

Type

conf

DOI

10.1109/ISPSD.2002.1016228

Filename

1016228