Resistance Determination for Sub-100-nm Carbon Nanotube Vias

Author

Changjian Zhou ; Vyas, Anshul A. ; Wilhite, Patrick ; Wang, Peng ; Mansun Chan ; Yang, Cary Y.

Author_Institution

Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

36

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

71

Lastpage

73

Abstract

We report resistance results from carbon nanotube (CNT) vias of widths from 150 to 60 nm for potential application in integrated circuits technology. Selective CNT growth inside the vias with an areal density of 2×10¹¹/cm² is achieved with a statistical average resistance of 1.7 kΩ with standard deviation between 420 Ω and 7.1 kΩ, and lowest resistance of 150 Ω for 60 nm vias, the lowest reported value for sub-100 nm-CNT vias. Statistical analysis yields a best-case projected value of 295 Ω for a 30 nm via, within one order of magnitude of its copper and tungsten counterparts.

Keywords

carbon nanotubes; integrated circuit interconnections; vias; carbon nanotube vias; integrated circuit technology; resistance 295 ohm; resistance 420 ohm to 7.1 kohm; resistance determination; selective CNT growth; size 150 nm to 60 nm; size 30 nm; statistical analysis; Carbon nanotubes; Contact resistance; Electrical resistance measurement; Integrated circuit interconnections; Metals; Resistance; Standards; Carbon nanotube (CNT); Interconnect; interconnect; via;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2366301

Filename

6940272