Properties of CdTe(Cl) crystal used for radiation detector

Author

Shoji, T. ; Ohba, K. ; Onab, H. ; Suehiro, T. ; Hiratate, Y.

Author_Institution

Tohoku Inst. of Technol., Sendai, Japan

fYear

1992

fDate

25-31 Oct 1992

Firstpage

50

Abstract

A new method of growth of CdTe crystal doped with chlorine using radio-frequency THM which can provide excellent uniformity of Cl atoms for compensating the cadmium vacancies in CdTe crystal has been developed. Using the crystal grown by this method, a large number of radiation detectors which exhibit the same characteristics can be produced from one CdTe ingot. The authors discuss the relationship between the response characteristics of a γ-ray detector and crystal properties studied by photoluminescence and SIMS measurements. The response property of the radiation detector becomes worse as the intensity of the 1.554 eV emission line increases. This 1.554 eV emission line, which is mainly observed in the OR-THM crystals, is ascribed to the chlorine impurity

Keywords

gamma-ray detection and measurement; photoluminescence; secondary ion mass spectra; semiconductor counters; 1.554 eV emission line; Cd vacancies; CdTe(Cl); CdTe:Cl; SIMS; crystal properties; gamma -ray detector; photoluminescence; radiation detector; radio-frequency THM; response; Atomic measurements; Cadmium; Crystals; Electric resistance; Excitons; Furnaces; Photoluminescence; Radiation detectors; Radio frequency; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301184

Filename

301184