Parameter extraction of single electron transistor based on Master Equation approach

Author

Sheela, L. ; Sudha, S. ; Balamurugan, N.B.

Author_Institution

Regional Centre of Anna Univ., Tirunelveli, India

fYear

2013

fDate

7-9 Jan. 2013

Firstpage

1

Lastpage

5

Abstract

In this paper, single electron transistor is modeled using Master Equation (ME) approach. In our scheme the steady state Master Equation was expressed, in which the resultant value is necessary for the current calculation. A ME for the probability distribution of electrons in the SET dot is obtained from the stoachastic process, allowing the calculation of device characteristics. Helmholtz´s free energy is considered to determine the transport of electrons through a SET device. Work done by voltage source and free energy change is calculated to get improved IV characteristics of SET.

Keywords

free energy; master equation; probability; semiconductor device models; single electron transistors; Helmholtz free energy; ME approach; SET IV characteristics; SET device; SET dot; device characteristics; electron probability distribution; electron transport; free energy change; master equation approach; parameter extraction; single-electron transistor modeling; steady state master equation; stoachastic process; voltage source; Educational institutions; Electric potential; Shape; Transistors; Device modeling; Single-electron transistor; coulomb blockade; master equation; quantum dot; tunneling rate;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT), 2013 International Conference on

Conference_Location

Tiruvannamalai

Print_ISBN

978-1-4673-5300-7

Type

conf

DOI

10.1109/ICEVENT.2013.6496581

Filename

6496581