Prototype double-sided silicon sensor (DSSS) for SDC detector

Author

Ohsugi, T. ; Iwata, Y. ; Ohyama, H. ; Okada, M. ; Ohmoto, T. ; Unno, Y. ; Kohriki, T. ; Tamura, N. ; Miyata, H. ; Higuchi, M. ; Niwa, K. ; Nakamura, M. ; Nagashima, Y. ; Daigo, M. ; Murakami, A. ; Kobayashi, S. ; Yamamoto, K. ; Yamamura, K. ; Muramaatsu,

Author_Institution

Dept. of Phys., Hiroshima Univ., Japan

fYear

1992

fDate

25-31 Oct 1992

Firstpage

219

Abstract

A full-size, double-sided, AC coupling sensor for the SDC central tracker was fabricated. The bias feeding resistor for each strip on both surfaces was implemented by a poly-Si line. The resistance was well controlled within a design value which is good enough to feed uniform bias to each strip. The ohmic-contact strip isolation was attained by inserting a p⁺ channel between n⁺ strips. The readout capacitance was minimized by making a narrow strip on the p⁺ side and by inserting a wide isolation p⁺ channel in the n⁺ strip side. The capacitance is measured to be 0.8 pF/cm on the p⁺ strip side and 1.13 pF/cm on the n⁺ strip side. The junction edge breakdown voltage has been pushed up to more than 150 V by an Al strip narrower than the implanted strip width

Keywords

capacitance; semiconductor counters; 150 V; AC coupling sensor; Al strip; SDC detector; Si detector; bias feeding resistor; double-sided; junction edge breakdown voltage; ohmic-contact; readout capacitance; resistance; Capacitance; Leakage current; Physics; Prototypes; Radiation detectors; Signal resolution; Silicon radiation detectors; Spread spectrum communication; Strips; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301201

Filename

301201