Benefits of SiGe over silicon bipolar technology for broadband mixers with bandwidth above 10 GHz

Author

Hackl, S. ; Wurzer, M. ; Bock, J. ; Meister, T.F. ; Knapp, H. ; Aufinger, K. ; Boguth, S. ; Treitinger, L. ; Scholtz, A.L.

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

3

fYear

2001

fDate

20-24 May 2001

Firstpage

1693

Abstract

Future broadband wireless services will use carrier frequencies in the range of 10 GHz to 40 GHz. This raises the question which semiconductor technologies are suited for realization of the key RF building blocks like LNAs, mixers, oscillators and, in a later phase, for the complete monolithic integration of receivers and transmitters. This work investigates the benefits of SiGe bipolar technology in comparison to silicon at identical feature size for broadband mixers with bandwidth in the range mentioned above.

Keywords

Ge-Si alloys; bipolar transistors; microwave bipolar transistors; microwave mixers; semiconductor materials; 10 GHz; 10 to 40 GHz; RF front-end; Si; SiGe; bandwidth; broadband mixer; semiconductor bipolar technology; wireless communication; Bandwidth; Circuit noise; Cutoff frequency; Delay; Germanium silicon alloys; Manufacturing; Paper technology; Radio frequency; Radio transmitters; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967231

Filename

967231