A charge sensitive preamplifier based on GaAs heterojunction bipolar transistors

Author

Buttar, C.M. ; Walker, S. ; Shankar, K.

Author_Institution

Sheffield Univ., UK

fYear

1992

fDate

25-31 Oct 1992

Abstract

Summary form only. The application of GaAs technology to particle physics experiments has been investigated. It appears that GaAs heterojunction bipolar transistors (HBT) might suit the requirements for the front end electronics, such as radiation hardness and adequate gm at very low current for low power dissipation and at fast shaping times. Since the operation of an HBT is similar to that of a silicon bipolar transistor, general analog simulators, such as SPICE, could be used to simulate HBT designs. A preamplifier design with RC-CR shaping has been developed, and a prototype has been fabricated using surface mount technology and discrete HBTs

Keywords

gallium arsenide; nuclear electronics; p-n heterojunctions; preamplifiers; radiation hardening (electronics); GaAs heterojunction bipolar transistors; RC-CR shaping; SPICE; charge sensitive preamplifier; front end electronics; radiation hardness; surface mount technology; Bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Power dissipation; Preamplifiers; Prototypes; SPICE; Silicon; Surface-mount technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0884-0

Type

conf

DOI

10.1109/NSSMIC.1992.301277

Filename

301277