DocumentCode
1928547
Title
High Speed PIN Photodiodes for 10 - 20 Gbit/s High Sensitivity Photoreceivers
Author
Blanconnier, P. ; Giraudet, L. ; Olivier-Martin, F. ; Praseuth, J.P. ; Legros, E.
Author_Institution
France Telecom / CNET / Laboratoire de Bagneux, 196, Avenue Henri Ravera, BP 107, F-92225 Bagneux Cedex, FRANCE
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
567
Lastpage
570
Abstract
This paper describes photodiodes developed for bit rates of 10 to 20 Gbit/s, obtained by compromising absorption thickness, capacitance and optical fibre coupling. Their fabrication is described, their characteristics are given, and illustrated by the realization of high speed high sensitivity photoreceivers at 10 and 20 Gbit/s.
Keywords
Absorption; Bandwidth; Bit rate; Capacitance; Detectors; Diodes; Fabrication; Indium gallium arsenide; Optical films; PIN photodiodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436164
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