• DocumentCode
    1928884
  • Title

    Comparison of Performance and Reliability Between Mosfets with Lpcvd Gate Oxide and Thermal Gate Oxide

  • Author

    Ahn, J. ; Ting, W. ; Kwong, D.L.

  • Author_Institution
    Department of Electrical and Computer Engineering, The University of Texas
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Annealing; CMOS technology; Compressive stress; Dielectric substrates; Electric breakdown; Electron traps; Isolation technology; MOS capacitors; MOSFETs; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664707
  • Filename
    664707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1928884